M. D. Williams, D. K. Samarakoon, X.-Q. (Larry) Wang (Clark Atlanta University) D. W. Hess (GeTech)
Clark Atlanta University and Georgia Tech. researchers supported by the NSF PREM project studied the electronic characteristics of multilayer epitaxial graphene under a perpendicularly applied electric bias.
The experimental and theoretical results demonstrate that the tailoring of electronic band structure correlates with the interlayer coupling tuned by the applied bias. The controllable electronic structure of rotationally fault-stacked epitaxial graphene grown on the C-face of SiC provides promising routes for future device applications.
The research result was accepted for published in Nanoscale 4, 2962 (2012).